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NSS40200L: 低饱和压晶体管,PNP,-40 V,2.0 A

Datasheet: Low VCE(sat) Transistor, PNP, -40 V, 2.0 A
Rev. 8 (86kB)
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低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。
特性   优势
     
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
 
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
   
应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
LOWVOLTAGEP2SGEVB Active
Pb-free
Three LED Low Voltage Parallel-to-Series Lighting Circuit
Availability & Samples
Specifications
外形
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NSS40200LT1G Active
Pb-free
Halide free
NSS40200L SOT-23-3 318-08 1 260 Tape and Reel 3000 $0.108
NSV40200LT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NSS40200L SOT-23-3 318-08 1 260 Tape and Reel 3000 $0.1481
市场订货至交货的时间(周) : Contact Factory
FutureElectronics   (2020-08-19 00:00) : >1K
Avnet   (2020-08-19 00:00) : >1K
PandS   (2020-09-14 00:00) : >1K
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
NSS40200LT1G  
 $0.108 
Pb
H
 Active   
PNP
Low VCE(sat)
0.095
2
40
40
7
0.9
0.9
250
-
100
0.71
SOT-23-3
NSV40200LT1G  
 $0.1481 
Pb
A
H
P
 Active   
PNP
Low VCE(sat)
0.095
2
40
40
7
0.9
0.9
250
-
100
0.71
SOT-23-3
外形
318-08   
封装
NSS40200L: 低饱和压晶体管,PNP,-40 V,2.0 A
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