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FCD600N65S3R0: 功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,6 A,600 mΩ,DPAK

Datasheet: MOSFET – Power, N-Channel, SUPERFET III, Easy Drive, 650 V, 6 A, 600 mΩ
Rev. 4 (211kB)
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SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的出色性能。此先进技术专用于最大程度降低导通损耗,提供出色的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更轻松的设计实施。
特性   优势
     
  • 700 V @ TJ= 150 oC
 
  • Higher system reliability at low temperature operation
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
 
  • Low switching loss
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
 
  • Low switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Typ. RDS(on) = 493 mΩ
   
  • Internal Gate Resistance: 0.9 Ω
   
应用   终端产品
  • Computing
  • Consumer
  • Industrial
 
  • Notebook / Desktop computer
  • Game Console
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
  • Telecom / Server
技术文档及设计资源
应用注释 (12) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FCD600N65S3R0 Active
Pb-free
Halide free
FCD600N65S3R0 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.4158
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCD600N65S3R0  
 $0.4158 
Pb
H
 Active   
N-Channel
Single
650
30
4.5
6
54
-
-
600
-
11
465
DPAK-3 / TO-252-3
外形
369AS   
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