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NTD4906N: 功率 MOSFET 30V 54A 5.5 mΩ 单 N 沟道 DPAK

Datasheet: Power MOSFET, 30 V, 54 A, Single N-Channel, DPAK/IPAK
Rev. 5 (129080kB)
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功率 MOSFET,单 N 沟道 30V,54A DPAK/IPAK
特性   优势
     
  • Low RDS(on) to Minimize Conduction Losses
 
  • Improve System Efficiency
  • Low Capacitance to Minimize Driver Losses
 
  • Improve Switching Performance
  • Optimized Gate Charge to Minimize Switching Losses
 
  • Improve Switching Performance
  • These are PbFree Devices
 
  • RoHs Compliance
应用   终端产品
  • CPU Power Delivery
  • DCDC Converters
 
  • Desktop, Game Console, others
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
ONS321A5VGEVB Active
Pb-free
5 Vgs MOSFET Evaluation Board
ONS321B12VGEVB Active
Pb-free
12 Vgs MOSFET Evaluation Board
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTD4906N-1G Obsolete
Pb-free
Halide free
NTD4906N DPAK INSERTION MOUNT 369 1 260 Tube 75  
NTD4906N-35G Obsolete
Pb-free
Halide free
NTD4906N IPAK-3 369AD 1 260 Tube 75  
NTD4906NT4G Obsolete
Pb-free
Halide free
NTD4906N DPAK-3 369AA 1 260 Tape and Reel 2500  
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : <1K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : <1K
外形
369AA    369AD    369   
封装
NTD4906N: 功率 MOSFET 30V 54A 5.5 mΩ 单 N 沟道 DPAK
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5 Vgs MOSFET Evaluation Board - ONS321A5VGEVB
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