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NTHS4101P: 单 P 沟道,ChipFET™ 功率 MOSFET,-20V,-6.7A,34mΩ

Datasheet: MOSFET — Power, P-Channel, ChipFET -20 V, 6.7 A
Rev. 4 (118kB)
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功率 MOSFET,-20 V,-6.7 A, 单 P 沟道,ChipFET™
特性
 
  • Offers an Ultra Low RDS(on) Solution in the ChipFet™ Package
  • Miniature ChipFet™ Package with 40 % Smaller Footprint than TSOP-6, makes it an ideal device for Applications where board space is at a premium.
  • Low Profile (< 1.1 mm) allows it to fit easily into extremely thin environments such as Portable Electronics.
  • Designed to Provide Low RDS(on) at Gate Voltage ( as low as 1.8V). The Operating Voltage used in many Logic ICs in Portable Electronics.
  • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not required.
  • Operated at Standard Logic Level Gate Drive, Facilitating Future Migrations to Lower Levels using the same Basic Topology.
应用   终端产品
  • Optimized for Battery and Load Management Applications in Portable Equipment and other Portable Applciations
  • Charge Control in Battery Chargers
  • Buck and Boost Converters
 
  • MP3 Players
  • Cell Phones
  • Digital Cameras
  • PDAs
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTHS4101PT1G Active
Pb-free
Halide free
NTHS4101P ChipFET-8 1206A-03 1 260 Tape and Reel 3000 $0.3463
市场订货至交货的时间(周) : Contact Factory
PandS   (2020-09-14 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTHS4101PT1G  
 $0.3463 
Pb
H
 Active   
P-Channel
Single
-20
8
1.5
4.8
1.3
30
21
-
-
25
2100
ChipFET-8
外形
1206A-03   
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