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NTTFS4H05N: 单 N 沟道功率 MOSFET 25V，94A，3.3mΩ

Datasheet: MOSFET — Power, Single, N-Channel, μ8-FL 25 V, 94 A
Rev. 4 (141kB)
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功率 MOSFET 25V 94A 3.3 mΩ 单 N 沟道 µ8FL
特性
 
  • Optimized Design to Minimize Conduction and Switching Losses
  • Optimized Package to Minimize Parasitic Inductances
  • Optimized material for improved thermal performance
  • RoHS Compliant
应用   终端产品
  • High Performance DC-DC Conversion
  • Point of Load
  • System Voltage Rails
  
  • Netcom, Telecom
  • Server
技术文档及设计资源
设计和开发工具 (2) 封装图纸 (1)
软件 (8) 视频 (1)
仿真模型 (4) 评估板文档 (15)
数据表 (1)  
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
LC709501A06GEVB Consult Sales Office
Pb-free
Power Bank Controller Evaluation Board
LC709511A02GEVB Consult Sales Office
Pb-free
Power Bank Controller Evaluation Board
LC709511A05GEVB Consult Sales Office
Pb-free
Power Bank Controller Evaluation Board
STR-SMARTLIBGAUGE-GEVK Active
Pb-free
LC709204F Smart LiB Gauge Automatic Support Kit
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价）
类型
外形
类型
Temperature
类型
数量
NTTFS4H05NTAG Active
Pb-free
Halide free
NTTFS4H05N WDFN-8 / u8FL 511AB 1 260 Tape and Reel 1500 $0.5637
NTTFS4H05NTWG Active
Pb-free
Halide free
NTTFS4H05N WDFN-8 / u8FL 511AB 1 260 Tape and Reel 5000 $0.5637
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : 17 to 20

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTTFS4H05NTAG  
 NTTFS4H05N 
 $0.5637 
Pb
H
 Active   
N-Channel
Single
25
20
2.1
94
46.3
-
4.8
3.8
16
8.7
1205
WDFN-8 / u8FL
NTTFS4H05NTWG  
 NTTFS4H05N 
 $0.5637 
Pb
H
 Active   
N-Channel
Single
25
20
2.1
94
46.3
-
4.8
3.8
16
8.7
1205
WDFN-8 / u8FL
外形
511AB   
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