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NVHL025N65S3: 单 N 沟道,功率 MOSFET,SUPERFET® III,Easy Drive,650 V,75 A,25 mΩ,TO-247

Datasheet: MOSFET — Power, N-Channel, Automotive SUPERFET® III, Easy-drive 650 V, 75 A, 25 mΩ
Rev. 2 (296kB)
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SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此先进技术专用于最大程度降低导电损耗,提供卓越的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更简单的设计实施。
特性   优势
     
  • Best in Class body diode
 
  • Lower over shoot during reverse recovery
  • Internal Rg
 
  • Low switching noise
  • Lower RDS(ON) / Same Packages
 
  • High System Reliability
  • Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS
 
  • Ease of use for fast design-in
  • Internal Zener / 650V BVdss
 
  • Low EMI & High Power Density
应用   终端产品
  • HV DC/DC converter
  • On Board Charger
 
  • On Board Charger
  • DC/DC Converter
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
SEC-6D6KW-OBC-TTP-GEVB Active
Pb-free
A 6.6kW OBC evaluation board using Totem pole topology
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVHL025N65S3 Active
AEC Qualified
PPAP Capable
Pb-free
NVHL025N65S3, Single N-Channel Power MOSFET SUPERFET III, Easy Drive, 650 V , 75 A, 25 m?, TO-247 TO-247-3LD 340CX NA Tube 450 Contact Sales Office
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NVHL025N65S3  
Pb
A
P
 Active   
N-Channel
Single
650
30
4.5
75
595
25
236
7330
TO-247-3LD
外形
340CX   
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