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NXH80B120L2Q0: 功率集成模块,双升压,1200 V,40 A,IGBT + 1200 V,30 A 硅二极管

Datasheet: Q0 - Dual Boost Power Module
Rev. 0 (261kB)
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NXH80B120L2Q0SG 是一款功率模块,包含一个双升压级,由两个 40A/1200V IGBT、两个 30A/1200V 硅二极管 和两个用于这些 IGBT 的 25A/1600V 防并联二极管组成。包括两个传统 25A/1600V 旁通整流器,用于涌入电流限制。包括一个板上热敏电阻。
特性   优势
     
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 uJ
 
  • Fast IGBT with low VCE(SAT) for high efficiency
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
 
  • Low VF bypass diodes for excellent efficiency in bypass mode
  • Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A
 
  • Si Diode for moderate speed switching
  • Solderable Pins
 
  • Easy mounting
  • Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module
   
  • Thermistor
   
应用   终端产品
  • Solar Inverter Boost Stage
 
  • Solar Inverter
  • UPS
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类型
数量
NXH80B120L2Q0SNG Obsolete
Pb-free
Halide free
NXH80B120L2Q0, Nickel-plated DBC Q0 180AJ NA BTRAY 24  
市场订货至交货的时间(周) : Contact Factory
外形
180AJ   
Application
Diagram - Block
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