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FFSB3065B-F085: 汽车碳化硅 (SiC) 肖特基二极管,650 V

Datasheet: Silicon Carbide Schottky Diode 650 V, 30 A
Rev. 3 (176kB)
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碳化硅 (SiC) 肖特基二极管使用全新技术,能够提供卓越的开关性能,且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和卓越的热性能,使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI,以及减小的系统尺寸和成本。
特性   优势
     
  • Max Junction Temperature 175°C
 
  • PPAP capable
  • Avalanche Rated 144 mJ
   
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC−Q101 Qualified and PPAP Capable
   
应用   终端产品
  • Automotive HEV−EV Onboard Chargers
  • Automotive HEV−EV DC−DC Converters
 
  • PHEV-EV Onboard charger and DC -DC
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
SEC-3PH-11-OBC-EVB Active
Pb-free
Three-phase On Board Charger (OBC) PFC-LLC platform
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FFSB3065B-F085 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
FFSB3065B-F085, Automotive Silicon Carbide (SiC) Schottky Diode, 650 V D2PAK2 (TO-263-2L) 418BK 1 260 Tape and Reel 800 $4.1903
市场订货至交货的时间(周) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSB3065B-F085  
 $4.1903 
Pb
A
H
P
 Active   
Automotive
with Schottky Diode
650
30
1.7
120
120
D2PAK2 (TO-263-2L)
外形
418BK   
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